Eu3+-Doped Wide Band Gap Zn2SnO4 Semiconductor Nanoparticles: Structure and Luminescence
Mirjana NMN Dimitrievska, Tamara B. Ivetic, Alexander P. Litvinchuk, Andrew Fairbrother, Bojan B. Miljevic, Goran R. Strbac, Alejandro Perez-Rodriguez, Svetlana R. Lukic-Petrovic
Nanocrystalline Zn2SnO4powders doped with Eu3+ ions were synthesized via a mechanochemical solid-state reaction method followed by post annealing in air at 1200 °C. X-ray diffraction (XRD), energy-dispersive X-ray (EDX), Raman and photoluminescence (PL) spectroscopies provide convincing evidence for the incorporation of Eu3+ ions into the host matrix on non-centrosymmetric sites of cubic spinel lattice. Microstructural analysis shows that the crystalline grain size decreases with the addition of Eu3+. Formation of a nanocrystalline Eu2Sn2O7 secondary phase is also observed. Luminescence spectra of Eu3+-doped samples show several emissions, including narrow-band magnetic dipole emission at 595 nm and electric dipole emission at 615 nm of the Eu3+ ions. Excitation spectra and lifetime measurements suggested that Eu3+ ions participate at octahedral sites of Zn^2+^ or Sn4+ under a weak crystal field, rather than the tetrahedral sites of Zn2+, due to the high octahedral stabilization energy for Eu3+. Activation of symmetry forbidden (IR-active and silent) modes is observed in the Raman scattering spectra of both pure and doped samples, indicating a disorder of the cation sublattice of Sn2SnO4 nanocrystallites. These results were further supported by the first principle lattice dynamics calculations. The spinel-type Zn2SnO4 shows effectiveness in hosting Eu3+ ions, which could be used as a prospective green/red emitter. This works also illustrates how sustainable and simple preparation methods could be used for effective engineering of material properties.
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Eu<sup>3+</sup>-Doped Wide Band Gap Zn<sub>2</sub>SnO<sub>4</sub> Semiconductor Nanoparticles: Structure and Luminescence, Journal of Physical Chemistry C, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=921545
(Accessed December 5, 2023)