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Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs, A1 0.3Ga 0.7As, In 0.2Ga 0.8As, in 0.53Ga 0.47As, In 0.52A1 0.48As, and InP

Published

Author(s)

G. C. DeSalvo, W. F. Tseng, J. Comas
Citation
Journal of the Electrochemical Society
Volume
139
Issue
3

Citation

DeSalvo, G. , Tseng, W. and Comas, J. (1992), Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs, A1<sub> 0.3</sub>Ga<sub> 0.7</sub>As, In<sub> 0.2</sub>Ga<sub> 0.8</sub>As, in<sub> 0.53</sub>Ga<sub> 0.47</sub>As, In<sub> 0.52</sub>A1<sub> 0.48</sub>As, and InP, Journal of the Electrochemical Society (Accessed June 18, 2024)

Issues

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Created February 29, 1992, Updated October 12, 2021