Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Epitaxial Graphenes on Silicon Carbide

Published

Author(s)

Joseph A. Stroscio, Walt A. de Heer, Phillip First, Claire Berger, Thomas Seyller, Jeong-Sun Moon

Abstract

The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC is much different than growth on the C-terminated SiC surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graphene is described, as well as progress toward the development of epitaxial graphene devices. This materials system is rich in subtleties, and graphene grown on the two polar faces differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.
Citation
Materials Research Bulletin
Volume
35
Issue
4

Keywords

graphene, epitaxial graphene, silicon carbide, carbon electronics

Citation

Stroscio, J. , de, W. , , P. , Berger, C. , Seyller, T. and Moon, J. (2010), Epitaxial Graphenes on Silicon Carbide, Materials Research Bulletin, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=904592 (Accessed May 25, 2022)
Created April 1, 2010, Updated February 19, 2017