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Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors
Published
Author(s)
Regis J. Kline, Jana Zaumseil, Henning Sirringhaus
Abstract
The effect of morphology and microstructure on the emission characteristics of ambipolar light-emitting field-effect transistors is studied using the polyfluorene copolymer F8BT [poly(9,9-di-n-octylfluorene-alt-benzothiadiazole)] as a model system. Different intensity distributions of the emission zones of amorphous, polycrystalline, and aligned F8BT films are demonstrated. Electroluminescence maps of the channel region are produced by overlaying a series of images recorded during gate voltage sweeps. They show a correlation to the microcrystalline structure of the F8BT and are assumed to visualize the current density distribution within the transistor channel.
Kline, R.
, Zaumseil, J.
and Sirringhaus, H.
(2008),
Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854063
(Accessed October 15, 2025)