Kline, R.
, Zaumseil, J.
and Sirringhaus, H.
(2008),
Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854063
(Accessed October 15, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors
Published
Author(s)
, Jana Zaumseil, Henning Sirringhaus
Abstract
The effect of morphology and microstructure on the emission characteristics of ambipolar light-emitting field-effect transistors is studied using the polyfluorene copolymer F8BT [poly(9,9-di-n-octylfluorene-alt-benzothiadiazole)] as a model system. Different intensity distributions of the emission zones of amorphous, polycrystalline, and aligned F8BT films are demonstrated. Electroluminescence maps of the channel region are produced by overlaying a series of images recorded during gate voltage sweeps. They show a correlation to the microcrystalline structure of the F8BT and are assumed to visualize the current density distribution within the transistor channel.Citation
Applied Physics Letters
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created February 18, 2008, Updated February 19, 2017