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Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors

Published

Author(s)

Regis J. Kline, Jana Zaumseil, Henning Sirringhaus

Abstract

The effect of morphology and microstructure on the emission characteristics of ambipolar light-emitting field-effect transistors is studied using the polyfluorene copolymer F8BT [poly(9,9-di-n-octylfluorene-alt-benzothiadiazole)] as a model system. Different intensity distributions of the emission zones of amorphous, polycrystalline, and aligned F8BT films are demonstrated. Electroluminescence maps of the channel region are produced by overlaying a series of images recorded during gate voltage sweeps. They show a correlation to the microcrystalline structure of the F8BT and are assumed to visualize the current density distribution within the transistor channel.
Citation
Applied Physics Letters

Citation

Kline, R. , Zaumseil, J. and Sirringhaus, H. (2008), Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854063 (Accessed May 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 18, 2008, Updated February 19, 2017