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Electrical Transport and Magnetic Properties of a Possible Electron-Doped Layered Manganese Oxide

Published

Author(s)

Y Zhao, Y H. Li, S B. Ogale, M Rajeswari, V Smolyaninova, T Wu, A Biswas, L Salamanca-Riba, R L. Greene, R Ramesh, M Venkatesan, Jake H. Scott

Abstract

In this paper, we report on the growth of La067Sr0.33MnOx thin films in vacuum using pulsed laser deposition and their structural, transport, and magnetic properties. The as-grown thin films have both the matrix La1.34Sr0.66MnO4 phase with K2NiF4 structure and an embedded Mn) phase. The electrical transport and magnetic properties of the films are dominated by the matrix phase. By annealing, the as-grown thin films can be transformed into the normal La0.67Sr0.33MnO3 single phase, which shows the expected colossal magnetoresistance effect. Based on the composition of the matrix phase, and the structural, electrical, and magnetic properties of the films, we propose that the matrix phase is possibly electron-doped with a mixed valence of Mn2+/Mn3+ instead of the Mn3+/Mn4+ as in the hole-doped case.
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
61
Issue
No. 6

Keywords

colossal magnetoresistance, manganese oxide, mixed valence, pulsed laser deposition

Citation

Zhao, Y. , Li, Y. , Ogale, S. , Rajeswari, M. , Smolyaninova, V. , Wu, T. , Biswas, A. , Salamanca-Riba, L. , Greene, R. , Ramesh, R. , Venkatesan, M. and Scott, J. (2000), Electrical Transport and Magnetic Properties of a Possible Electron-Doped Layered Manganese Oxide, Physical Review B (Condensed Matter and Materials Physics) (Accessed May 20, 2024)

Issues

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Created February 1, 2000, Updated February 17, 2017