Electrical Transport and Magnetic Properties of a Possible Electron-Doped Layered Manganese Oxide

Published

February 1, 2000

Author(s)

Y Zhao, Y H. Li, S B. Ogale, M Rajeswari, V Smolyaninova, T Wu, A Biswas, L Salamanca-Riba, R L. Greene, R Ramesh, M Venkatesan, Jake H. Scott

Abstract

In this paper, we report on the growth of La₀₆₇Sr_0.33MnO_x thin films in vacuum using pulsed laser deposition and their structural, transport, and magnetic properties. The as-grown thin films have both the matrix La_1.34Sr_0.66MnO₄ phase with K₂NiF₄ structure and an embedded Mn) phase. The electrical transport and magnetic properties of the films are dominated by the matrix phase. By annealing, the as-grown thin films can be transformed into the normal La_0.67Sr_0.33MnO₃ single phase, which shows the expected colossal magnetoresistance effect. Based on the composition of the matrix phase, and the structural, electrical, and magnetic properties of the films, we propose that the matrix phase is possibly electron-doped with a mixed valence of Mn²⁺/Mn³⁺ instead of the Mn³⁺/Mn⁴⁺ as in the hole-doped case.

Citation

Physical Review B (Condensed Matter and Materials Physics)

Volume

61

Issue

No. 6

Pub Type

Journals

Keywords

colossal magnetoresistance, manganese oxide, mixed valence, pulsed laser deposition

Citation

Zhao, Y. , Li, Y. , Ogale, S. , Rajeswari, M. , Smolyaninova, V. , Wu, T. , Biswas, A. , Salamanca-Riba, L. , Greene, R. , Ramesh, R. , Venkatesan, M. and Scott, J. (2000), Electrical Transport and Magnetic Properties of a Possible Electron-Doped Layered Manganese Oxide, Physical Review B (Condensed Matter and Materials Physics) (Accessed September 7, 2024)