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Electrical Characterization of Very-Narrow-Gap Bulk HgCdTe Single Crystals by Variable Magnetic-Field-Hall Measurements

Published

Author(s)

Jin S. Kim, David G. Seiler, R. A. Lancaster, M. B. Reine
Citation
Journal of Electronic Materials
Volume
25
Issue
8

Citation

Kim, J. , Seiler, D. , Lancaster, R. and Reine, M. (1996), Electrical Characterization of Very-Narrow-Gap Bulk HgCdTe Single Crystals by Variable Magnetic-Field-Hall Measurements, Journal of Electronic Materials (Accessed July 25, 2024)

Issues

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Created December 30, 1996, Updated October 12, 2021