Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electrical and Spectroscopic Characterization of Metal/Monolayer/Si Devices

Published

Author(s)

Curt A. Richter, Christina A. Hacker, Lee J. Richter

Abstract

A simple technique for vibrational spectroscopy of metal/monolayer/silicon structures is applied to study the interaction of Au, Al, and Ti with alkane monolayers, either assembled onto thin oxides or directly attached to Si. The results are correlated with current-voltage and capacitance-voltage measurements. Alkane films on oxides are found to be robust with respect to the deposition of Au and Al and are partially consumed during the deposition of Ti. In contrast, alkoxy films directly attached to H-terminated Si via an ether linkage are displaced by all three metals. The vibrational data are positively correlated with the electrical data to establish an improved understanding of the interactions at the buried metal/monolayer interface. The results demonstrate extreme sensitivity of the monolayer/metal reactivity to the nature of the film/substrate bonding.
Citation
Journal of Physical Chemistry B
Volume
109
Issue
46

Keywords

capacitance-voltage, Current-voltage, FTIR, molecular electronics, spectroscopy

Citation

Richter, C. , Hacker, C. and Richter, L. (2005), Electrical and Spectroscopic Characterization of Metal/Monolayer/Si Devices, Journal of Physical Chemistry B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31908 (Accessed May 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created November 24, 2005, Updated January 27, 2020