Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Effects of Annealing on the Microstructure and Giant Magnetoresistance of Co-Cu-Based Spin Valves

Published

Author(s)

M A. Mangan, G Spanos, Robert McMichael, P J. Chen, William F. Egelhoff Jr.

Abstract

The effect of annealing on the microstructure and giant magnetoresistive properties of NiO/Co/Cu/Co bottom spin valves is investigated using the conventional and high-resolution transmission electron microscopy. The value of giant Magnetoresistance (GMR) of these spin valves is observed to decrease from 12.2 % to 2.7 % after annealing for 30 min at 335 degrees C. This decrease is attributed to an inrease in the roughness of the Co and Cu layers. In annealed specimens, grain boundary grooving is also observed in the antiferromagnetic NiO Pinning layer at the NiO/Co interface, and the location of these grooves correlate with waviness in the Co/Cu interfaces. An increase in the Neel orange-peel coupling between the ferromagnetic Co layers, resulting from the increased roughness of the Co/Cu interfaces, accompanies the degradation of the GMR.
Citation
Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science
Volume
32
Issue
No. 3

Keywords

annealing, giant magnetoresistance (GMR), interface, microstructure, spin valves

Citation

Mangan, M. , Spanos, G. , McMichael, R. , Chen, P. and Egelhoff Jr., W. (2001), Effects of Annealing on the Microstructure and Giant Magnetoresistance of Co-Cu-Based Spin Valves, Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science (Accessed December 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 28, 2001, Updated October 12, 2021