The Effect of Polymer Material Properties on Wire Bonding to MCMs and Advanced Copper-Low-K Integrated Circuits

Published

December 1, 1999

Author(s)

George G. Harman

Abstract

This paper describes the polymer/metallurgical interactions that can occur during the wire bonding interconnection process when bond pads are located over low modulus polymers (or higher modulus if heated near its glass transition temperature, T₂ for bonding). This includes bonding to multichip modules (MCM-D and -L), polymer build-layers on PCBs, flex circuits, etc., as well as to the new copper and low dielectric constant (Cu/Lo-K) structures on advanced integrated circuits. These are all part of the same problem and share the same general solutions. However, special emphasis on Cu/LoK structures and problems.

Proceedings Title

Proc. Intl. Soc. for Optical Engineering (SPIE) 2nd Annual IEEE-CPMT/ASME/SPE/SPIE/MRS/ARM/SF2M Workshop (POLY'99)

Conference Dates

December 12-15, 1999

Conference Location

Paris, FR

Pub Type

Conferences

Keywords

buildup layers, Cu/Lok, MCM, metallurgy, modulus, polymers, wire bonding

Citation

Harman, G. (1999), The Effect of Polymer Material Properties on Wire Bonding to MCMs and Advanced Copper-Low-K Integrated Circuits, Proc. Intl. Soc. for Optical Engineering (SPIE) 2nd Annual IEEE-CPMT/ASME/SPE/SPIE/MRS/ARM/SF2M Workshop (POLY'99), Paris, FR (Accessed October 14, 2025)