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The Effect of Polymer Material Properties on Wire Bonding to MCMs and Advanced Copper-Low-K Integrated Circuits

Published

Author(s)

George G. Harman

Abstract

This paper describes the polymer/metallurgical interactions that can occur during the wire bonding interconnection process when bond pads are located over low modulus polymers (or higher modulus if heated near its glass transition temperature, T2 for bonding). This includes bonding to multichip modules (MCM-D and -L), polymer build-layers on PCBs, flex circuits, etc., as well as to the new copper and low dielectric constant (Cu/Lo-K) structures on advanced integrated circuits. These are all part of the same problem and share the same general solutions. However, special emphasis on Cu/LoK structures and problems.
Proceedings Title
Proc. Intl. Soc. for Optical Engineering (SPIE) 2nd Annual IEEE-CPMT/ASME/SPE/SPIE/MRS/ARM/SF2M Workshop (POLY'99)
Conference Dates
December 12-15, 1999
Conference Location
Paris, FR

Keywords

buildup layers, Cu/Lok, MCM, metallurgy, modulus, polymers, wire bonding

Citation

Harman, G. (1999), The Effect of Polymer Material Properties on Wire Bonding to MCMs and Advanced Copper-Low-K Integrated Circuits, Proc. Intl. Soc. for Optical Engineering (SPIE) 2nd Annual IEEE-CPMT/ASME/SPE/SPIE/MRS/ARM/SF2M Workshop (POLY'99), Paris, FR (Accessed February 27, 2024)
Created December 1, 1999, Updated February 17, 2017