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Effect of Anneal Temperature on Si/Buried Oxide Interface Roughness of SIMOX

Published

Author(s)

C. Jacobs, A. Genis, L. P. Allen, Peter Roitman
Proceedings Title
Proc., 1994 IEEE SOI Conference
Conference Dates
October 4-6, 1994
Conference Location
Nantucket, MA, USA

Citation

Jacobs, C. , Genis, A. , Allen, L. and Roitman, P. (1994), Effect of Anneal Temperature on Si/Buried Oxide Interface Roughness of SIMOX, Proc., 1994 IEEE SOI Conference, Nantucket, MA, USA (Accessed May 27, 2024)

Issues

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Created December 30, 1994, Updated October 12, 2021