Published: September 01, 2018
Nina P. Basta, Aaron M. Hagerstrom, Jasper A. Drisko, James C. Booth, Edward J. Garboczi, Christian J. Long, Nathan D. Orloff
Electrical properties of materials are a necessary part of any circuit design. With emerging applications at millimeter- wave frequencies, there is a need to characterize new materials before they come to market. At frequencies below about 67 GHz, it is common to perform both on- wafer calibrations and on-wafer materials characterization with multiple transmission lines fabricated on a material under test. In contrast, at frequencies above 67 GHz, it is common to employ a multiple-offset-reflect calibration technique. Here, we explore the possibility of employing multiple-offset-reflect devices for on-wafer materials characterization at frequencies up to 110 GHz. To compare our results, we performed companion analyses with multiline thru- reflect-line, extracting the permittivity of fused silica and SU-8, a common photo-curable polymer. For fused silica, we obtained a permittivity of 𝟑. 𝟖𝟎 ± 𝟎. 𝟎𝟏 across the full frequency regime. For SU-8, we obtained a permittivity of 𝟑. 𝟑𝟎 ± 𝟎. 𝟎𝟏 at 28 GHz, which agreed with the literature.
Citation: IEEE Transactions on Microwave Theory and Techniques
Pub Type: Journals
multiple offset, short/reflect (one or two port) calibration, propagation constant, broadband, artifact, non- destructive, permittivity, materials, 110 GHz, permeability, design
Created September 01, 2018, Updated April 25, 2019