Deposition and Characterization of Low-Loss Epitaxial Non-Linear Dielectric Thin Films for Microwave Devices

Published

August 1, 1999

Author(s)

A M. Hermann, B Veeraraghavan, Davor Balzar, F R. Fickett

Abstract

Oxide ferroelectric thin films for frequency-tunable microwave devices, in which the dielectric constant of the non-linear dielectric is varied by application of electric fields, have been depositied using PLD. We have fabricated single phase epitaxial Ba_0.6Sr_0.4TiO₃ and KTaO₃ thin film capacitors for applications at 300K and 77K, respectively. Single phase KTaO₃ films were obtained only with excess potassium source in the target along with KTaO₃ perovskite phase. The films have been characterized for structure and morphology by X-ray diffraction and AFM. The dielectric properties were measured in the low frequency range from 100 kHz to 10 MHz, using interdigitated capacitors. Low loss tangents (0.002 at 300K)were observed for highly oriented Ba_0.6Sr_0.4TiO₃ films. The importance of low losses for various devices is discussed and the dielectric constants, loss tangents and tunability of these films are reported in this paper.

Citation

Integrated Ferroelectrics

Volume

28

Issue

No. 1-4

Pub Type

Journals

Keywords

BaSrTiO₃, epitaxial thin film, KTaO₃, tunable capacitor

Citation

Hermann, A. , Veeraraghavan, B. , Balzar, D. and Fickett, F. (1999), Deposition and Characterization of Low-Loss Epitaxial Non-Linear Dielectric Thin Films for Microwave Devices, Integrated Ferroelectrics (Accessed October 15, 2025)