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Dependence of Electron Density on Fermi Energy in N-type Gallium Antimonide

Published

Author(s)

Herbert S. Bennett, Howard Hung

Abstract

The majority electron density as a function of the Fermi energy is calculated in zinc Blende, n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at I, L, and X and one equivalent valence band at I of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a non-destructive method for wafer acceptance tests. Raman measurements give values of the Fermi energy and therefore there is a need to have physically reasonable values of the electron density when the Fermi energy is known experimentally.
Citation
Journal of Research (NIST JRES) -
Volume
108
Issue
3

Keywords

band structure, dopants, Fermi energy, gallium antinomide, Raman measurements, electron density

Citation

Bennett, H. and Hung, H. (2003), Dependence of Electron Density on Fermi Energy in N-type Gallium Antimonide, Journal of Research (NIST JRES), National Institute of Standards and Technology, Gaithersburg, MD (Accessed May 26, 2024)

Issues

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Created April 30, 2003, Updated October 12, 2021