Dependence of Electron Density on Fermi Energy in N-type Gallium Antimonide

Published

May 1, 2003

Author(s)

Herbert S. Bennett, Howard Hung

Abstract

The majority electron density as a function of the Fermi energy is calculated in zinc Blende, n-type GaSb for donor densities between 10¹⁶ cm^-3 and 10¹⁹ cm^-3. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at I, L, and X and one equivalent valence band at I of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a non-destructive method for wafer acceptance tests. Raman measurements give values of the Fermi energy and therefore there is a need to have physically reasonable values of the electron density when the Fermi energy is known experimentally.

Citation

Journal of Research (NIST JRES) -

Volume

108

Issue

3

NIST Pub Series

Journal of Research (NIST JRES)

Pub Type

NIST Pubs

Keywords

band structure, dopants, Fermi energy, gallium antinomide, Raman measurements, electron density

Citation

Bennett, H. and Hung, H. (2003), Dependence of Electron Density on Fermi Energy in N-type Gallium Antimonide, Journal of Research (NIST JRES), National Institute of Standards and Technology, Gaithersburg, MD (Accessed December 13, 2024)