Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Dependence of Electron Density on Fermi Energy in N-type Gallium Antimonide



Herbert S. Bennett, Howard Hung


The majority electron density as a function of the Fermi energy is calculated in zinc Blende, n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at I, L, and X and one equivalent valence band at I of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a non-destructive method for wafer acceptance tests. Raman measurements give values of the Fermi energy and therefore there is a need to have physically reasonable values of the electron density when the Fermi energy is known experimentally.
Journal of Research (NIST JRES) -


band structure, dopants, Fermi energy, gallium antinomide, Raman measurements, electron density


Bennett, H. and Hung, H. (2003), Dependence of Electron Density on Fermi Energy in N-type Gallium Antimonide, Journal of Research (NIST JRES), National Institute of Standards and Technology, Gaithersburg, MD (Accessed May 26, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created April 30, 2003, Updated October 12, 2021