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Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide

Published

Author(s)

Herbert S. Bennett, Howard Hung

Abstract

The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at 'u, L, and X and one equivalent valence band at 'u ) of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a non-destructive method for wafer acceptance tests.
Citation
Journal of Applied Physics
Volume
98
Issue
10

Citation

Bennett, H. and Hung, H. (2005), Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31933 (Accessed July 24, 2024)

Issues

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Created November 10, 2005, Updated October 12, 2021