Silver, R.
, Dagata, J.
and Tseng, H.
(1995),
Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum, Journal of Vacuum Science and Technology A
(Accessed April 26, 2024)
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Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum
Published
Author(s)
, , H. W. Tseng
Abstract
Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh vacuum and air. A combination of forward-and reverse-bias imaging and position-dependent tunneling spectroscopy makes it possible to delineate the metallurgical junction location of abrupt asymmetric n(+)p and symmetric n(+)p(+) junctions. The experimental results are shown to be consistent with simulations based on the metal-insulator-semiconductor band-bending model when surface states and bulk transport through the pn junction are properly taken into account in the calculations.Citation
Journal of Vacuum Science and Technology A
Volume
13(3)
Pub Type
Journals
Citation
Created April 30, 1995, Updated October 12, 2021