Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum

Published

Author(s)

Richard M. Silver, John A. Dagata, H. W. Tseng

Abstract

Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh vacuum and air. A combination of forward-and reverse-bias imaging and position-dependent tunneling spectroscopy makes it possible to delineate the metallurgical junction location of abrupt asymmetric n(+)p and symmetric n(+)p(+) junctions. The experimental results are shown to be consistent with simulations based on the metal-insulator-semiconductor band-bending model when surface states and bulk transport through the pn junction are properly taken into account in the calculations.
Citation
Journal of Vacuum Science and Technology A
Volume
13(3)

Citation

Silver, R. , Dagata, J. and Tseng, H. (1995), Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum, Journal of Vacuum Science and Technology A (Accessed April 24, 2024)
Created April 30, 1995, Updated October 12, 2021