Deep Depth profiling using Gas Cluster SIMS – Micrometer Topography Development and Effects on Depth Resolution

Published

May 19, 2021

Author(s)

Shinichiro N. Muramoto, Dan Graham

Abstract

Argon cluster ions have enabled molecular depth profiling to unprecedented depths, with minimal loss of chemical information or changes in sputter rate. However, for deep depth profiles of organic films using the gas cluster ion source (> 10 µm of sputtered depth), micron-scale topography in the shape of pillars was seen to form rather quickly and was shown to significantly affect both the linearity of the sputter yield and depth resolution. To minimize any distortions in the 3D image due to topography, a step-wise, staggered sample rotation was employed. By using polymer spheres embedded in an organic film, it was possible to measure the depth resolution at the film-sphere interface as a function of sputtered depth and observe when possible distortions in the 3D image occurred. In this way, it was possible to quantitatively measure the effect of micron-scale topography and sample rotation on the quality of a depth profile.

Citation

Surface and Interface Analysis

Pub Type

Journals

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Keywords

tof-sims, argon cluster, gas cluster sources, thick films, depth profiling, topography, roughness

Citation

Muramoto, S. and Graham, D. (2021), Deep Depth profiling using Gas Cluster SIMS – Micrometer Topography Development and Effects on Depth Resolution, Surface and Interface Analysis, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=931918 (Accessed April 19, 2024)