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Deembedding parasitic elements of GaN nanowire MESFETs by use of microwave measurements

Published

Author(s)

Dazhen Gu, Thomas M. Wallis, Paul T. Blanchard, SangHyun S. Lim, Atif A. Imtiaz, Kristine A. Bertness, Norman A. Sanford, Pavel Kabos

Abstract

We present a deembedding roadmap for extracting parasitic elements of a nanowire (NW) MESFET device from full two-port scattering-parameter measurements in the frequency range from 0.1 GHz to 25 GHz. The NW MESFET is integrated in a microwave coplanar waveguide structure. A convetional MESFET circuit modeling is modified to include small capacitance that is nonnegligible in the NW devices. We follow a detailed step-by-step removal of external elements and an iteration search for optimized model data. The fitted model indicates good agreement with experimental data across the frequency band. This study reflects a significant step toward full circuit modeling of NW MESFET devices under the normal operating conditions.
Citation
Applied Physics Letters

Citation

Gu, D. , Wallis, T. , Blanchard, P. , Lim, S. , Imtiaz, A. , Bertness, K. , Sanford, N. and Kabos, P. (2011), Deembedding parasitic elements of GaN nanowire MESFETs by use of microwave measurements, Applied Physics Letters (Accessed July 18, 2024)

Issues

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Created June 3, 2011, Updated January 27, 2020