Current quantization due to single-electron transfer in Si-wire charge-coupled devices
Akira Fujiwara, Neil M. Zimmerman, Yukinori Ono, Yasuo Takahashi
We observe a quantized current due to single-electron transfer in a small charge-coupled device, which consists of a narrow Si-wire channel with fine gates; the gate is used to form a tunable barrier potential. By modulating two barrier potentials under the fine gates with phase-shifted pulse voltages, quantized numbers of electrons are injected into and extracted from the charge island sandwiched by the two barriers. Current plateaus due to single-electron transfer are clearly observed at 20 K with frequencies up to 100 MHz and a current level of 16 pA.
, Zimmerman, N.
, Ono, Y.
and Takahashi, Y.
Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters, [online], https://doi.org/10.1063/1.1650036, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926560
(Accessed October 3, 2023)