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Current quantization due to single-electron transfer in Si-wire charge-coupled devices

Published

Author(s)

Akira Fujiwara, Neil M. Zimmerman, Yukinori Ono, Yasuo Takahashi

Abstract

We observe a quantized current due to single-electron transfer in a small charge-coupled device, which consists of a narrow Si-wire channel with fine gates; the gate is used to form a tunable barrier potential. By modulating two barrier potentials under the fine gates with phase-shifted pulse voltages, quantized numbers of electrons are injected into and extracted from the charge island sandwiched by the two barriers. Current plateaus due to single-electron transfer are clearly observed at 20 K with frequencies up to 100 MHz and a current level of 16 pA.
Citation
Applied Physics Letters
Volume
84

Citation

Fujiwara, A. , Zimmerman, N. , Ono, Y. and Takahashi, Y. (2004), Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters, [online], https://doi.org/10.1063/1.1650036, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926560 (Accessed May 23, 2024)

Issues

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Created February 22, 2004, Updated October 12, 2021