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Critical Current Control and Microwave-Induced Characteristics of (NbN/TiNx)n/NbN Stacked Junction Arrays



Mayumi Ishizaki, Hirotake Yamamori, A. Shoji, Samuel Benz, Paul Dresselhaus


Stacked double and triple Josephson junctions with NbN electrodes and TiNx barriers were fabricated for the next generation 10 V programmable Josephson voltage standard. Because of the difficulties in the growth of uniform junctions in the stack with a constant barrier thickness, a stack with carefully engineered thicknesses was grown which exhibited uniform junction properties. The junction arrays on these chips were biased with microwave power at 16 GHz resulting in constant voltage steps consistent with the total number of junctions in the array, including the multiple junctions in the stacks. The steps had a current range greater than 1 mA at 4.2 K.
IEEE Transactions on Applied Superconductivity


stacked junctions, voltage standard, digital-to-analog converter, Josephson junction, sputtering


Ishizaki, M. , Yamamori, H. , Shoji, A. , Benz, S. and Dresselhaus, P. (2003), Critical Current Control and Microwave-Induced Characteristics of (NbN/TiN<sub>x</sub>)<sub>n</sub>/NbN Stacked Junction Arrays, IEEE Transactions on Applied Superconductivity, [online], (Accessed May 20, 2024)


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Created May 31, 2003, Updated October 12, 2021