Cosputtered Amorphous Nb_xSi_1-x Barriers for Josephson-Junction Circuits

Published

December 1, 2006

Author(s)

Burm Baek, Paul D. Dresselhaus, Samuel P. Benz

Abstract

Cosputtered Amorphous NbxSi1-x has been developed as a barrier material for Josephson junction array circuits. This material is not only promising as a normal-metal barrier for state-of-the-art Josephson voltage standard circuits, but the capability of tuning the barrier resistivity over a wide range (including the metal-insulator transition) could lead to applications in high-speed superconductive electronics. The electrical characteristics and uniformity of amorphous NbxSi1-x-barrier junctions are similar to that of other normal-metal barriers, but the superior etching properties makes this barrier material especially promising for tall stacked-junction that are required for high-junction-density applications. By controlling the deposition conditions, the reproducibility of devices with cosputtered amorphous NbxSi1-x is sufficient to produce high-quality stacked-junction superconductive devices.

Citation

IEEE Transactions on Applied Superconductivity

Pub Type

Journals

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Keywords

Amorphous alloy, Josephson arrays, metal-insulator transition, superconducting devices, thin film devices

Citation

Baek, B. , Dresselhaus, P. and Benz, S. (2006), Cosputtered Amorphous Nb_xSi_1-x Barriers for Josephson-Junction Circuits, IEEE Transactions on Applied Superconductivity, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32192 (Accessed October 13, 2025)