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Contact Damage Produced in Si and MgO by Nanoindentation

Published

Author(s)

B Hockey

Abstract

TEM has been used to characterize the defect structures produced in Si and Mgo by Berkovich indentation at loads ranging from 0.1 mN to 5 mN. Plane-section observations are used to describe the nature of the defects and their spatial distribution about the residual impression. In Si, the observations provide a direct measure of the true area of contact under load; in Mgo, the observations provide an upper bound to the area of contact.
Citation
Microscopy and Microanalysis

Keywords

defects, MgO, nanoindentation, Si, TEM

Citation

Hockey, B. (2017), Contact Damage Produced in Si and MgO by Nanoindentation, Microscopy and Microanalysis (Accessed March 4, 2024)
Created February 19, 2017