Hockey, B.
(2017),
Contact Damage Produced in Si and MgO by Nanoindentation, Microscopy and Microanalysis
(Accessed April 1, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Contact Damage Produced in Si and MgO by Nanoindentation
Published
Author(s)
Abstract
TEM has been used to characterize the defect structures produced in Si and Mgo by Berkovich indentation at loads ranging from 0.1 mN to 5 mN. Plane-section observations are used to describe the nature of the defects and their spatial distribution about the residual impression. In Si, the observations provide a direct measure of the true area of contact under load; in Mgo, the observations provide an upper bound to the area of contact.Citation
Microscopy and Microanalysis
Pub Type
Journals
Keywords
defects, MgO, nanoindentation, Si, TEM
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created February 19, 2017