Lang, K.
, Hite, D.
, Simmonds, R.
, Mcdermott, R.
, Pappas, D.
and Martinis, J.
(2004),
Conducting atomic force microscopy for Nanoscale tunnel barrier characterization, Review of Scientific Instruments, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31457
(Accessed October 12, 2024)
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Conducting atomic force microscopy for Nanoscale tunnel barrier characterization
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Author(s)
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Abstract
Increasing demands on nanometer scale properties of oxide tunnel barriers necessitate a consistent means to assess them at these lengths. Here we use conducting atomic force microscopy (CAFM) to characterize aluminum oxide (AlOx)barriers to be used in Josephson-junction qubits. We find the appropriate physical interpretation for CAFM is as a probe of local propensity for insulator breakdown. We consider the effect of imaging force to establish a statistically reproducible method to compare CAFM current maps. We present results for several AlOx samples demonstrating the potential of this technique.Citation
Review of Scientific Instruments
Volume
75
Issue
8
Pub Type
Journals
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Keywords
aliminum oxide, conducting atomic force microscopy, Josephson junction qubit
Citation
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Created August 12, 2004, Updated October 12, 2021