Comparison of heteroepitaxial YBa2Cu3O7-δ and TiO2 thin film growth

Published

December 31, 1997

Author(s)

Alexana Roshko, F. J. Stork, David A. Rudman, D. J. Aldrich, P. A. Hotsenpiller

Abstract

The growth of heteroepitaxial YBa₂Cu₃O_7-δ and TiO₂ thin films has been investigated as a function of deposition rate. film thickness, and deposition temperature. In spite of the fact that the two materials are grown at very different rates and undercoolings, the films are found to have similar growth mechanisms and dependences on film thickness and deposition temperature. Both types of films were found to have an island growth morphology, as shown by STM and AFM. The diameter of the islands was found to increase with the film thickness through a power law dependence. It is shown that this is not the result of a grain growth mechanism, but is consistent with that predicted for a coarsening mechanism. The density of the islands decreased exponentially with increasing substrate temperature. The temperature dependence is consistent with those of homogeneous nucleation and of a diffusion-controlled process. The similar characteristics of the films of these two different materials suggest that YBa₂Cu₃O_7-δ may be useful as a model system for studying heteroepitaxial oxide film growth.

Citation

Journal of Crystal Growth

Volume

174

Pub Type

Journals

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Citation

Roshko, A. , Stork, F. , Rudman, D. , Aldrich, D. and Hotsenpiller, P. (1997), Comparison of heteroepitaxial YBa₂Cu₃O_7-δ and TiO₂ thin film growth, Journal of Crystal Growth, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=24067 (Accessed May 16, 2024)