Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Comparison of heteroepitaxial YBa2Cu3O7-δ and TiO2 thin film growth

Published

Author(s)

Alexana Roshko, F. J. Stork, David A. Rudman, D. J. Aldrich, P. A. Hotsenpiller

Abstract

The growth of heteroepitaxial YBa2Cu3O7-δ and TiO2 thin films has been investigated as a function of deposition rate. film thickness, and deposition temperature. In spite of the fact that the two materials are grown at very different rates and undercoolings, the films are found to have similar growth mechanisms and dependences on film thickness and deposition temperature. Both types of films were found to have an island growth morphology, as shown by STM and AFM. The diameter of the islands was found to increase with the film thickness through a power law dependence. It is shown that this is not the result of a grain growth mechanism, but is consistent with that predicted for a coarsening mechanism. The density of the islands decreased exponentially with increasing substrate temperature. The temperature dependence is consistent with those of homogeneous nucleation and of a diffusion-controlled process. The similar characteristics of the films of these two different materials suggest that YBa2Cu3O7-δ may be useful as a model system for studying heteroepitaxial oxide film growth.
Citation
Journal of Crystal Growth
Volume
174

Citation

Roshko, A. , Stork, F. , Rudman, D. , Aldrich, D. and Hotsenpiller, P. (1997), Comparison of heteroepitaxial YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-&#948;</sub> and TiO<sub>2</sub> thin film growth, Journal of Crystal Growth, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=24067 (Accessed May 30, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 1997, Updated February 19, 2017