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A Combinatorial Study of Metal Gate/HfO2-MOSCAPS

Published

Author(s)

Martin L. Green, Kao-Shuo Chang, Ichiro Takeuchi, T Chikyow

Abstract

Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (?Vfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that over 90% 1% of Ni and Ti, and 75% 1% of Pt were attained in the library. A more negative ?Vfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller Fm near Ni- and Pt-rich corners. In addition, measured JL values are consistent with the observed ?Vfb variations.
Citation
ECS Transactions

Keywords

advanced gate stack, combinatorial materials science, metal gate electrodes, sputtering

Citation

Green, M. , Chang, K. , Takeuchi, I. and Chikyow, T. (2017), A Combinatorial Study of Metal Gate/HfO2-MOSCAPS, ECS Transactions (Accessed June 12, 2024)

Issues

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Created February 19, 2017