Chiral Index Dependence of the G+ and G- RamanModes in Semiconducting Carbon Nanotubes

Published

January 24, 2012

Author(s)

Ming Zheng, Xiaomin X. Tu, Hagen Telg, Stephen K. Doorn, Juan Duque

Abstract

Raman spectroscopy on the radial breathing mode is a common tool to determine the diameter d or chiral indices (n;m) of single walled carbon nanotubes. In this work we presentan alternative technique to determine d and (n;m) based on the high-energy G mode. From resonant Raman scattering experiments on 14 highly purified single chirality (n;m) samples we obtain the diameter, chiral angle and family dependence of the G and G+ peak position. Considering theoretical predictions we discuss the origin of these dependences with respect to rehybridization of the carbon orbitals, confinement, and electron-electron interactions. The relative Raman intensities of the two peaks have a systematic chiral-angle dependence in agreement with theories considering the symmetry of nanotubes and the associated phonons.

Citation

ACS Nano

Pub Type

Journals

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Keywords

carbon nanotubes, raman spectroscopy

Citation

Zheng, M. , Tu, X. , Telg, H. , Doorn, S. and Duque, J. (2012), Chiral Index Dependence of the G+ and G- RamanModes in Semiconducting Carbon Nanotubes, ACS Nano, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910144 (Accessed November 19, 2025)