Charged Grain Boundaries and Carrier Recombination in Polycrystalline Thin-Film Solar Cells
Benoit H. Gaury, Paul M. Haney
We present analytical relations for the dark recombination current of a pn+ junction with positively charged columnar grain boundaries in the high defect density regime. We consider two defect state configurations relevant for positively charged grain boundaries: a single donor state and a continuum of both acceptors and donors. Compared to a continuum of acceptor+donor states, or to the previously studied single acceptor+donor state, the grain boundary recombination of a single donor state is suppressed by orders of magnitude. We show numerically that superposition holds near the open-circuit voltage Voc, so that our dark J(V) relations determine Voc for a given short circuit current Jsc. We finally explicitly show how Voc depends on the grain boundary defect state structure.
and Haney, P.
Charged Grain Boundaries and Carrier Recombination in Polycrystalline Thin-Film Solar Cells, Physical Review Applied, [online], https://doi.org/10.1103/PhysRevApplied.8.054026
(Accessed December 9, 2023)