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Characterizing the Broadband RF Permittivity of 3D-Integrated Layers in a Glass Wafer Stack from 100 MHz to 30 GHz

Published

Author(s)

Jacob Pawlik, Tomasz Karpisz, Nicholas Derimow, Sarah Evans, Jim Booth, Nate Orloff, Chris Long, Angela Stelson

Abstract

We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave electronics on the rise, reliable methods for measuring the electrical properties of dielectrics used in integrated circuits are critical. We outline an on-wafer method for extracting the permittivity of a 3D multilayer glass structure from 100 MHz to 30 GHz using S-parameter measurements of different calibration chips. Our method can be used to inform better design of metrology for dielectric materials for 3D integrated circuit technologies.
Conference Dates
June 16-21, 2024
Conference Location
Washington, DC, US
Conference Title
2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

Keywords

permittivity, dielectrics, microwave integrated circuits, glass, wafer-level packaging

Citation

Pawlik, J. , Karpisz, T. , Derimow, N. , Evans, S. , Booth, J. , Orloff, N. , Long, C. and Stelson, A. (2024), Characterizing the Broadband RF Permittivity of 3D-Integrated Layers in a Glass Wafer Stack from 100 MHz to 30 GHz, 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, DC, US, [online], https://doi.org/10.1109/IMS40175.2024.10600278, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=957051 (Accessed October 6, 2025)

Issues

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Created July 30, 2024, Updated August 20, 2024
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