Jones Jr., G.
and Elmquist, R.
(2008),
CHARACTERIZATION OF LOADING EFFECTS IN PRECISION 1 Ohm RESISTORS, Conference on Precision Electromagnetic Measurements Conference Digest, Broomfield, CO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32884
(Accessed December 11, 2024)
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CHARACTERIZATION OF LOADING EFFECTS IN PRECISION 1 Ohm RESISTORS
Published
Author(s)
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Abstract
Precision standard resistors manufactured within the last two decades using improved construction techniques and materials, such as the resistance alloy Evanohm, have been shown to have excellent environmental characteristics. Power dissipation (or loading) effects in several types of resistors have been examined including specifically those made of Manganin and Evanohm, and with the resistor element both sealed within a double wall container, or unsealed. Our recent tests on these resistors demonstrate that conditions of power dissipation within the resistors and the duty cycle of the power applied to the resistor have significant effect on the uncertainty of the measurement.Proceedings Title
Conference on Precision Electromagnetic Measurements Conference Digest
Report Number
32884
Conference Dates
June 8-13, 2008
Conference Location
Broomfield, CO, USA
Conference Title
Conference on Precision Electromagnetic Measurements
Pub Type
Conferences
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Created May 31, 2008, Updated October 12, 2021