Jones Jr., G.
and Elmquist, R.
(2008),
CHARACTERIZATION OF LOADING EFFECTS IN PRECISION 1 Ohm RESISTORS, Conference on Precision Electromagnetic Measurements Conference Digest, Broomfield, CO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32884
(Accessed October 16, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
CHARACTERIZATION OF LOADING EFFECTS IN PRECISION 1 Ohm RESISTORS
Published
Author(s)
,
Abstract
Precision standard resistors manufactured within the last two decades using improved construction techniques and materials, such as the resistance alloy Evanohm, have been shown to have excellent environmental characteristics. Power dissipation (or loading) effects in several types of resistors have been examined including specifically those made of Manganin and Evanohm, and with the resistor element both sealed within a double wall container, or unsealed. Our recent tests on these resistors demonstrate that conditions of power dissipation within the resistors and the duty cycle of the power applied to the resistor have significant effect on the uncertainty of the measurement.Proceedings Title
Conference on Precision Electromagnetic Measurements Conference Digest
Report Number
32884
Conference Dates
June 8-13, 2008
Conference Location
Broomfield, CO, USA
Conference Title
Conference on Precision Electromagnetic Measurements
Pub Type
Conferences
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created May 31, 2008, Updated October 12, 2021