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CF3I and C2Cl4 on Silicon Surfaces

Published

Author(s)

J E. Sanabia

Abstract

The nature of chemisorbed CF3I and C2Cl4 on silicon surfaces has been studied using a variety of ultra-high vacuum surface-science techniques, including temperature-programmed desorption and electron-stimulated desorption. Thesticking coefficients for both CF3I and C2Cl4 on 370 K silicon surfaces are near unity. For the CF3I-Si system, SiFx species and I desorb in temperature-programmed desorption. No molecular CF3I desorbs. For the C2Cl4-Si system,SiCl2 desorbs in temperature-programmed desorption. No molecular C2Cl4 desorbs. Low-energy (
Citation
CF3I and C2Cl4 on Silicon Surfaces

Keywords

electron-stimulated desorption, silicon, silicon surfaces, ultra-high vacuum surface-science

Citation

Sanabia, J. (2001), CF3I and C2Cl4 on Silicon Surfaces, CF3I and C2Cl4 on Silicon Surfaces (Accessed April 15, 2024)
Created January 1, 2001, Updated February 17, 2017