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Bond-Length Strain in Buried Ga1-xInxAs Thin-Alloy Films Grown Coherently on InP(001)

Published

Author(s)

Joseph C. Woicik, J A. Gupta, S P. Watkins, E D. Crozier

Abstract

The bond-length strain in a series of strained, buried Ga1-xInxAs thin-alloy films grown coherently on InP(001) has been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.
Citation
Applied Physics Letters
Volume
73
Issue
9

Keywords

bond-length strain, high-resolution EXAFS, InP(001), macroscopic distortions, microscopic distortions, pseudomorphic films

Citation

Woicik, J. , Gupta, J. , Watkins, S. and Crozier, E. (1998), Bond-Length Strain in Buried Ga<sub>1-x</sub>In<sub>x</sub>As Thin-Alloy Films Grown Coherently on InP(001), Applied Physics Letters (Accessed March 2, 2024)
Created August 16, 1998, Updated February 19, 2017