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Band-Gap Narrowing and III-V Heterostructure FETs, IEDM Technical Digest

Published

Author(s)

Daryl Myers, J. A. Lott, J R. Lowney, J. F. Klem, C. P. Tigges
Proceedings Title
Proc., International Electron Devices Meeting 1990
Conference Dates
December 9-12, 1990
Conference Location
San Francisco, CA, USA

Citation

Myers, D. , Lott, J. , Lowney, J. , Klem, J. and Tigges, C. (1990), Band-Gap Narrowing and III-V Heterostructure FETs, IEDM Technical Digest, Proc., International Electron Devices Meeting 1990, San Francisco, CA, USA (Accessed July 24, 2024)

Issues

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Created December 30, 1990, Updated October 12, 2021