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PUBLICATIONS

Asymmetry in Elementary Events of Magnetization Reversal in Ferromagnetic/Antiferromagnetic Bilayers

Published

Author(s)

Valerian I. Nikitenko, V S. Gornakov, Alexander J. Shapiro, Robert D. Shull, K Liu, S M. Zhou, C L. Chien

Abstract

Real-time magneto-optical indicator film images reveal distinct asymmetry in the motion of a single domain wall in a wedged-NiFe/uniform-FeMn bilayer due to the nucleation and behavior of an exchange spring in the antiferromagnetic layer. Magnetization reversal from the ground state begins at the thick end of the wedge where the exchange anisotropy field (HE) is minimal and the magnetostatic field (HMS) is maximal, whereas reversal into the ground state begins from the thin end where HE is maximal and HMS is minimal.
Citation
Physical Review Letters
Volume
84
Issue
No. 4
Pub Type
Journals

Keywords

coercivity, domain wall trap, magnetic random access memory (MRAM), memory cells, permalloy element

Citation

Nikitenko, V. , Gornakov, V. , Shapiro, A. , Shull, R. , Liu, K. , Zhou, S. and Chien, C. (2000), Asymmetry in Elementary Events of Magnetization Reversal in Ferromagnetic/Antiferromagnetic Bilayers, Physical Review Letters (Accessed October 4, 2024)

Issues

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Created January 24, 2000, Updated February 17, 2017