Asymmetry in Elementary Events of Magnetization Reversal in Ferromagnetic/Antiferromagnetic Bilayers

Published

January 24, 2000

Author(s)

Valerian I. Nikitenko, V S. Gornakov, Alexander J. Shapiro, Robert D. Shull, K Liu, S M. Zhou, C L. Chien

Abstract

Real-time magneto-optical indicator film images reveal distinct asymmetry in the motion of a single domain wall in a wedged-NiFe/uniform-FeMn bilayer due to the nucleation and behavior of an exchange spring in the antiferromagnetic layer. Magnetization reversal from the ground state begins at the thick end of the wedge where the exchange anisotropy field (H_E) is minimal and the magnetostatic field (H_MS) is maximal, whereas reversal into the ground state begins from the thin end where H_E is maximal and H_MS is minimal.

Citation

Physical Review Letters

Volume

84

Issue

No. 4

Pub Type

Journals

Keywords

coercivity, domain wall trap, magnetic random access memory (MRAM), memory cells, permalloy element

Citation

Nikitenko, V. , Gornakov, V. , Shapiro, A. , Shull, R. , Liu, K. , Zhou, S. and Chien, C. (2000), Asymmetry in Elementary Events of Magnetization Reversal in Ferromagnetic/Antiferromagnetic Bilayers, Physical Review Letters (Accessed October 15, 2025)