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Apparent Mobility of Interfaces in Integral Resistor Material



Andrew J. Slifka, John W. Drexler


Measurements were made on an integral resistor sample that showed apparent interfacial mobility. Initial measurements were made using infrared, optical, and scanning electron microscopies. Analysis of infrared microscopy measurements showed a broadening of an interfacial region, which behaved like diffusion. Electron microprobe analysis confirmed the diffusion mechanism. The polmer matrices of many materials commonly used in electronic packaging applications allow significant diffusion of metals, which may play a role in failure of devices, particularly integral and embedded passives.
Microscopy and Analysis
No. 93


electron microprobe, embedded passive, infrared microscopy, integral resistor, thermal scanned-probe microscopy


Slifka, A. and Drexler, J. (2003), Apparent Mobility of Interfaces in Integral Resistor Material, Microscopy and Analysis (Accessed April 18, 2024)
Created January 1, 2003, Updated February 17, 2017