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Apparatus to Measure Wafer Curvature for Multilayer Systems in a Vacuum Furnace

Published

Author(s)

A B. Mann, J Tapson, D van Heerden, A C. Lewis, Daniel Josell, Timothy P. Weihs

Abstract

A laser-based technique for measuring the curvature of a multilayer/substrate couple is described. Unlike most wafer curvature systems, the instrument described measures the local curvature of the multilayer/substrate couple, correcting for the local topography of the substate, rather than measuring changes in the average curvature of the multilayer/substrate couple. The apparatus has been designed specifically to perform biaxial zero-creep measurements at elevated temperatures in vacuum. It can also be used to examine the development of biaxial stresses during thermal cycling of thin films deposited on substrates.
Citation
Review of Scientific Instruments
Volume
73
Issue
No. 4

Keywords

curvature, multilayer, stress, thin film

Citation

Mann, A. , Tapson, J. , van Heerden, D. , Lewis, A. , Josell, D. and Weihs, T. (2002), Apparatus to Measure Wafer Curvature for Multilayer Systems in a Vacuum Furnace, Review of Scientific Instruments (Accessed April 20, 2024)
Created March 31, 2002, Updated October 12, 2021