Analytical description of charged grain boundary recombination in polycrystalline thin film solar cells
Benoit H. Gaury, Paul M. Haney
We present analytic expressions for the dark current-voltage relation of a pn+ junction with a positively charged columnar grain boundary, containing a distribution of defect states in the band gap. A closed form relation for the open-circuit voltage Voc is provided for an illuminated junction. These findings are verified by direct comparison with numerical simulations, and provide a quantitative understanding of the reduction of Voc by grain boundaries in thin film photovoltaic materials.
and Haney, P.
Analytical description of charged grain boundary recombination in polycrystalline thin film solar cells, 44th IEEE Photovoltaic specialist conference, Washington, d.c., DC, [online], https://doi.org/10.1109/PVSC.2017.8366730
(Accessed September 23, 2023)