Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Analytical description of charged grain boundary recombination in polycrystalline thin film solar cells

Published

Author(s)

Benoit H. Gaury, Paul M. Haney

Abstract

We present analytic expressions for the dark current-voltage relation of a pn+ junction with a positively charged columnar grain boundary, containing a distribution of defect states in the band gap. A closed form relation for the open-circuit voltage Voc is provided for an illuminated junction. These findings are verified by direct comparison with numerical simulations, and provide a quantitative understanding of the reduction of Voc by grain boundaries in thin film photovoltaic materials.
Proceedings Title
44th IEEE Photovoltaic specialist conference
Conference Dates
June 25-30, 2017
Conference Location
Washington, d.c., DC
Conference Title
IEEE Photovoltaic specialist conference

Citation

Gaury, B. and Haney, P. (2017), Analytical description of charged grain boundary recombination in polycrystalline thin film solar cells, 44th IEEE Photovoltaic specialist conference, Washington, d.c., DC, [online], https://doi.org/10.1109/PVSC.2017.8366730 (Accessed April 12, 2024)
Created June 26, 2017, Updated February 5, 2019