Analysis of trace impurities in semiconductor gas via cavity-enhanced direct frequency comb spectroscopy

Published

July 20, 2010

Author(s)

Kristine A. Bertness, Kevin C. Cossel, F Adler, M J. Thorpe, Jun Ye

Abstract

Cavity-enhanced direct frequency comb spectroscopy (CE-DFCS) has demonstrated powerful potential for trace-gas detection based on its unique combination of high bandwidth, rapid data acquisition, high sensitivity, and high resolution, which is unavailable with conventional systems. However, previous demonstrations have been limited to proof-of-principle experiments or studies of fundamental laboratory science. Here, we present the development of CEDFCS towards an industrial application-measuring impurities in arsine, an important process gas used in III-V semiconductor compound manufacturing. A strongly absorbing background gas with an extremely complex, congested, and broadband spectrum renders trace detection exceptionally difficult, but the capabilities of CEDFCS overcome this challenge and make it possible to identify and quantify multiple spectral lines associated with water impurities. Further, frequency combs allow easy access to new spectral regions via efficient nonlinear optical processes. Here, we demonstrate detection of multiple potential impurities across 1.75-1.95 υ (5710-5130 cm u-1 ), with a single-channel detection sensitivity (simultaneously over 2000 channels) of rv 4 × 10 u-8 cm u-1 Hz u-1⁄2 in nitrogen and, specifically, an absorption sensitivity of rv 4 × 10 u-7 cm u-1 Hz u-1⁄2 for trace water doped in arsine.

Citation

Applied Physics B-Photophysics and Laser Chemistry

Volume

10

Issue

1007

Pub Type

Journals

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Citation

Bertness, K. , Cossel, K. , Adler, F. , Thorpe, M. and Ye, J. (2010), Analysis of trace impurities in semiconductor gas via cavity-enhanced direct frequency comb spectroscopy, Applied Physics B-Photophysics and Laser Chemistry, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908253 (Accessed April 24, 2024)