Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Analysis for the Characterization of Oxygen Implanted Silicon (SIMOX) by Spectroscopic Ellipsometry

Published

Author(s)

M. G. Doss, Deane Chandler-Horowitz, Jay F. Marchiando, S. J. Krause, S. Seraphin
Proceedings Title
Proc., Materials Research Society Symposium
Volume
209
Conference Dates
November 26-December 1, 1990
Conference Location
Boston, MA, USA

Citation

Doss, M. , Chandler-Horowitz, D. , Marchiando, J. , Krause, S. and Seraphin, S. (1991), Analysis for the Characterization of Oxygen Implanted Silicon (SIMOX) by Spectroscopic Ellipsometry, Proc., Materials Research Society Symposium, Boston, MA, USA (Accessed July 15, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1991, Updated October 12, 2021