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Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM

Published

Author(s)

L Whitman, Joseph A. Stroscio, Robert A. Dragoset, Robert Celotta

Abstract

Field ion microscopists demonstrated more than twenty years ago that polarizable atoms adsorbed on a stepped surface can be induced to diffuse by an electric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electronic properties of both the naturally occuring and electric field-induced alkali metal structures observed on these semiconductor surfaces are discussed, including the possibility that the alkali metal overlayers are Mott insulators.
Conference Dates
August 17, 1992
Conference Location
Ventura, CA, US
Conference Title
Atomic and Nanoscale Modification of Materials: Fundamentals and Applications

Citation

Whitman, L. , Stroscio, J. , Dragoset, R. and Celotta, R. (1993), Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM, Atomic and Nanoscale Modification of Materials: Fundamentals and Applications, Ventura, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620407 (Accessed February 28, 2024)
Created December 31, 1992, Updated October 12, 2021