Whitman, L.
, Stroscio, J.
, Dragoset, R.
and Celotta, R.
(1993),
Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM, Atomic and Nanoscale Modification of Materials: Fundamentals and Applications, Ventura, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620407
(Accessed December 10, 2024)
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Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM
Published
Author(s)
L Whitman, , ,
Abstract
Field ion microscopists demonstrated more than twenty years ago that polarizable atoms adsorbed on a stepped surface can be induced to diffuse by an electric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electronic properties of both the naturally occuring and electric field-induced alkali metal structures observed on these semiconductor surfaces are discussed, including the possibility that the alkali metal overlayers are Mott insulators.Conference Dates
August 17, 1992
Conference Location
Ventura, CA, US
Conference Title
Atomic and Nanoscale Modification of Materials: Fundamentals and Applications
Pub Type
Conferences
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Created December 31, 1992, Updated October 12, 2021