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Sungmin Kim (Assoc)

Sungmin Kim is a Guest Researcher in the Nanoscale Processes and Measurements Group / Joint Quantum Institute (JQI) Associate Research Scientist. He received a B.S. and Ph.D in Physics from Seoul National University, Korea. His doctoral research focused on the epitaxial film growth of the iron-based high Tc superconductors by pulsed laser deposition method, and its measurements by scanning tunneling microscopy and spectroscopy. At NIST Sungmin has been working with Joseph Stroscio, developing the scanning probe microscope (SPM) system to investigate the physical properties of graphene or topological insulators in atomic scale. 

As an expert in scanning probe microscopy and cryogenic systems, he has mainly contributed to the construction of a state-of-art multifunctional quantum measurement system, which combines combining atomic force microscopy (AFM), scanning tunneling microscopy (STM) and electron transport measurement, with the finest energy resolution to date. With this NIST milli-kelvin SPM system, he has been studying the edge states of the graphene quantum hall system using the kelvin probe force microscopy and atomic force microscopy.

Projects

Selected Publications

  • S. Jeon, S. Kim, Y. Kuk, “Zero-bias anomaly and the electron correlation in a disordered metal film”, New Journal of Physics 22, 083045 (2020)

  • Sungmin Kim*, S. Yi*, M. Oh*, B. G. Jang, W. Nam, Y.-C. Yoo, M. Lee, H. Jeon, I. Zoh, H. Lee, C. Zhang, K.H. Kim, J. Seo, J.H. Shim, J. Chae, Y. Kuk, “Surface Reconstruction and Charge Modulation in BaFe2As2 Superconducting Film”, Journal of Physics: Condensed Matter 30, 315001 (2018)

  • C. Zhang, H. Jeon, M. Oh, M. Lee, S. Kim, S. Yi, H. Lee, I. Zoh, Y.-C. Yoo, Y. Kuk, “Development of a Wideband Amplifier for Cryogenic Scanning Tunneling Microscopy”, Review of Scientific Instruments 88, 066109 (2017)

  • B. Hwang, J. Hwang, J. K. Yoon, S. Lim, S. Kim, M. Lee, J. H. Kwon, H. Baek, D. Sung, G. Kim, S. Hong, J. Ihm, J. Stroscio, and Y. Kuk, “Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure”, Scientific Report 6, 31160 (2016)

  • B. Hwang, J. Kwon, M. Lee, S. J. Lim, S. Jeon, S. Kim, U. Ham, Y. J. Song, Y. Kuk, “Electron-Beam Assisted Growth of Hexagonal Boron-Nitride Layer", Curr. Appl. Phys. 13, 1365 (2013)

Publications

Edge channels of broken-symmetry quantum Hall states in graphene visualized by atomic force microscopy

Author(s)
Joseph A. Stroscio, Sungmin Kim, Johannes Schwenk, Daniel T. Walkup, Yihang Zeng, Fereshte Ghahari, Son T. Le, Marlou R. Slot, Julian Berwanger, Steven R. Blankenship, Kenji Watanabe, Takashi Taniguchi, Franz Giessibl, Nikolai Zhitenev, Cory Dean
The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded and brought into focus the concept of topological order in physics. The

Achieving µeV tunneling resolution in an in-operando scanning tunneling microscopy, atomic force microscopy, and magnetotransport system for quantum materials research

Author(s)
Johannes Schwenk, Sungmin Kim, Julian Berwanger, Fereshte Ghahari Kermani, Daniel T. Walkup, Marlou R. Slot, Son T. Le, W. G. Cullen, Steven R. Blankenship, Sasa Vranjkovic, Hans Hug, Young Kuk, Franz Giessibl, Joseph A. Stroscio
Research in new quantum materials require multi-mode measurements spanning length scales, correlations of atomic scale variables with macroscopic function, and
Created August 15, 2019, Updated March 1, 2023