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Steven R. Blankenship

Steve Blankenship is an Instrumentation Specialist in the Nanoscale Processes and Measurements Group of the Nanoscale Device Characterization Division. He received a B.S. in Physics from the University of Mary Washington, and a M.S. degree in Physics from Virginia Commonwealth University for research in surface science. Steve is an expert on computer-aided design (CAD) of experimental apparatus and instruments. His surface science background coupled with his engineering expertise has led to the design and construction of state-of-the-art experimental apparatus and instruments. Most notably are his contributions to the design and construction of scanning tunneling microscopy systems that operate in ultra-high vacuum, at cryogenic temperatures, and in high magnetic fields. While Steve's main expertise is in designing and building surface science instrumentation and molecular beam epitaxy systems, his knowledge and abilities allow him to assist Division staff with all phases of diverse experimental design, construction, system maintenance, and troubleshooting of complex problems. His contributions to NIST research program are widely acknowledged in publications. In 2013, Steve was honored by the American Vacuum Society (AVS) where he received the George T. Hanyo Award for his contributions to the scanning tunneling microscopy user facility.

Selected Publications

  • Real-Space Imaging of Structural Transitions in the Vortex Lattice of V3Si, C.E. Sosolik, J. A. Stroscio, M. D. Stiles, E. W. Hudson, S. R. Blankenship, A. P. Fein, R. J. Celotta, Physical Review Letters 68(14), 140503-1 (2003).
  • A Facility for Nanoscience Research: An Overview, J. A. Stroscio, E. W. Hudson, S. R. Blankenship, R. J. Celotta, and A. P. Fein, in Proceedings of the SPIE, Nanostructure Science, Metrology, and Technology, 4608, ed. by M.C. Peckerar and M.T. Postek, Gaithersburg, MD, (2002) p. 112.
  • A Low Temperature STM System for the Study of Quantum and Spin Electronic Systems, J. A. Stroscio, R. J. Celotta, S. R. Blankenship, E. W. Hudson, and A. P. Fein, in Proceedings of the 4th International Workshop on Quantum Functional Devices, November 15, 2000.
  • Electronic Structure and Crystalline Coherence in Fe/Si Multilayers, J. A. Carlisle, S. R. Blankenship, R. N. Smith, A. Chaiken, R. P. Michel, T. Van Buuren, L. J. Terminello, J. J. Jia, D. L. Callcott, and D. L. Ederer, Journal of Cluster Science 10(4), 591-599 (1999).
  • Reconstructions of Ag on High-Index Silicon Surfaces, S. R. Blankenship, H. H. Song, A. A. Baski, and J. A. Carlisle, Journal of Vacuum Science & Technology A 17(4), 1615-1620 (1999).



Achieving µeV tunneling resolution in an in-operando scanning tunneling microscopy, atomic force microscopy, and magnetotransport system for quantum materials research

Johannes Schwenk, Sungmin Kim, Julian Berwanger, Fereshte Ghahari Kermani, Daniel T. Walkup, Marlou R. Slot, Son T. Le, W. G. Cullen, Steven R. Blankenship, Sasa Vranjkovic, Hans Hug, Young Kuk, Franz Giessibl, Joseph A. Stroscio
Research in new quantum materials require multi-mode measurements spanning length scales, correlations of atomic scale variables with macroscopic function, and

A 10 mK Scanning Probe Microscopy Facility

Young J. Song, Alexander F. Otte, Steven R. Blankenship, Alan H. Band, Frank M. Hess, Young Kuk, Vladimir Shvarts, Zuyu Zhao, Joseph A. Stroscio
We describe the design, development and performance of a scanning probe microscopy (SPM) facility operating at a base temperature of 10 mK in magnetic fields up

A Facility for Nanoscience Research: An Overview

Joseph A. Stroscio, E Hudson, Steven R. Blankenship, Robert Celotta, Aaron P. Fein
We describe the development of an experimental system, consisting of a low temperature scanning tunneling microscope coupled to UHV tip and sample preparation
Created September 24, 2019, Updated October 9, 2019