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The rf-bias-induced decreases in plasma electron density observed by us [J. Appl. Phys. 102, 113302 (2007)] and others [Fox-Lyon et al., J. Vac. Sci. Technol. A
Plasma simulations require accurate yield data to predict the electron flux that is emitted when plasma-exposed surfaces are bombarded by energetic particles
Simple kinematic considerations indicate that, under certain conditions in radio-frequency (rf) plasmas, the amplitude of the low-energy peak in ion energy
Adding Si2H6 or Si3H8 additives to SiH4/H2 discharges increases the growth rates for thin films of microcrystalline and amorphous silicon, but the reasons for
Electrical signals are used for endpoint detection in plasma etching, but the origin of the electrical changes observed at endpoint is not well understood. As