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Huairuo Zhang (Assoc)

Publications

Thermal Stability of Titanium Contacts to MoS2

Author(s)
Huairuo Zhang, Albert Davydov, Leonid A. Bendersky, Keren M. Freedy, Stephen J. McDonnell
Thermal annealing of Ti contacts is commonly implemented in the fabrication of MoS2 devices however its effects on interface chemistry have not been previously

An Ultra-fast Multi-level MoTe2-based RRAM

Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to

Black phosphorus tunneling field-effect transistors

Author(s)
Albert Davydov, Huairuo Zhang, Leonid A. Bendersky
Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi

Patents

Phase Transition Based Resistive Random-Access Memory

NIST Inventors
Albert Davydov, Sergiy Krylyuk, Huairuo Zhang, and
Patent Description This invention relates to memory devices, in particular to resistive random-access memory (RRAM) cells. RRAM-based technology has gained attention of the semiconductor industry due to its potential scalability, high operation speed, high endurance and ease of process flow. RRAM
Created September 12, 2019, Updated June 15, 2021