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Huairuo Zhang (Assoc)

Publications

On-the-fly closed-loop materials discovery via Bayesian active learning

Author(s)
Aaron Gilad Kusne, Heshan Yu, Huairuo Zhang, Jason Hattrick-Simpers, Brian DeCost, Albert Davydov, Leonid A. Bendersky, Apurva Mehta, Ichiro Takeuchi
Active learning—the field of machine learning (ML) dedicated to optimal experiment design—has played a part in science as far back as the 18th century when

Thermal Stability of Titanium Contacts to MoS2

Author(s)
Huairuo Zhang, Albert Davydov, Leonid A. Bendersky, Keren M. Freedy, Stephen J. McDonnell
Thermal annealing of Ti contacts is commonly implemented in the fabrication of MoS2 devices however its effects on interface chemistry have not been previously

An Ultra-fast Multi-level MoTe2-based RRAM

Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to

Black phosphorus tunneling field-effect transistors

Author(s)
Albert Davydov, Huairuo Zhang, Leonid A. Bendersky
Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect
View more Publications

Patents (2018-Present)

Phase Transition Based Resistive Random-access Memory

NIST Inventors
Albert Davydov , Sergiy Krylyuk and Huairuo Zhang
A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device

Phase Transition Based Resistive Random-Access Memory

NIST Inventors
Albert Davydov , Sergiy Krylyuk and Huairuo Zhang
A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device
View All Patents
Created September 12, 2019, Updated December 9, 2022