Felix Kim (Fed)

Felix has extensive research experience using nondestructive radiation-based imaging methods, including laboratory X-ray computed tomography (XCT), synchrotron imaging, and neutron imaging. He has studied various materials such as granular materials, carbon fiber reinforced polymers, metal additive manufacturing (AM) parts, and semiconductor materials with some of these techniques. At NIST, he has reviewed and characterized different AM defects (e.g., lack-of-fusion and near-surface pores) using XCT, demonstrated a probability of detection (POD) method for XCT, and developed simulated XCT data sets to evaluate XCT defect detection algorithms. He has also researched different artificial defect fabrication methods and successfully created XCT defect artifacts using stepper lithography, deep reactive ion etching, and silicon fusion bonding techniques. Felix is currently leading a CHIPS metrology R&D project (XCT defect detection metrology of semiconductor advanced packaging) to produce reference artifacts and reference data sets with ground truth information to improve the metrology of the XCT defect detection process.