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Farzad Mahfouzi (Assoc)
Farzad Mahfouzi is a Research Associate in the Nanoscale Processes and Measurements Group / Joint Quantum Institute (JQI). He received his B.Sc. from the University of Isfahan, Iran, M.Sc. from IASBS, Iran, and Ph.D. in Physics from the University of Delaware. At NIST, he has been working with Paul Haney on projects focused on simulating quantum transport in novel materials for metrology applications. His research also employs ab initio methods to explore optoelectric effects and their relationship to current-induced surface magnetism.
Selected Publications
- Jiacheng Shi, Sevdenur Arpaci, Victor Lopez-Dominguez, Vinod K. Sangwan, Farzad Mahfouzi, Jin-woong Kim, Jordan G. Athas, Mohammad Hamdi, Can Aygen, Hanu Arava, Charudatta Phatak, Mario Carpentieri, Jidong S. Jiang, Matthew A. Grayson, Nicholas Kioussis, Giovanni Finocchio, Mark C. Hersam, Pedram Khalili Amiri, Electrically Controlled All-antiferromagnetic Tunnel Junctions on Silicon with Large Room-temperature Magnetoresistance, Adv. Mater. 2312008 (2024).
- Farzad Mahfouzi, Nicholas Kioussis, Elasto-Dynamical Induced Charge-Spin Pumping in Heavy Metals, Phys. Rev. Lett. 128, 215902 (2022).
- Farzad Mahfouzi, Rahul Mishra, Pohao Chang, Hyunsoo Yang and N. Kioussis, Microscopic origin of spin-orbit torque in ferromagnetic heterostructures: A first-principles approach, Physical Review B 101 (6), 060405 (2020).