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Christina Hacker (Fed)

Research Chemist, Group Leader

Dr. Hacker is a research chemist and Group Leader of the Nanoscale Spectroscopy Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). She joined NIST in 2002 as a National Research Council (NRC) Postdoctoral Fellow. Her work has investigated formation and characterization of monolayers on semiconductors for interface engineering electronic applications. In addition to developing new measurement techniques, such as p-polarized backside reflection absorption infrared spectroscopy to investigate buried electronic layers. Christina has also been instrumental in developing novel fabrication techniques, including flip-chip lamination, which is promising for many next generation electronic structures.  Current work under the leadership of Dr. Hacker expands engineered interfaces and metrology methods for future nanoelectronic applications.

Dr. Hacker received her Ph.D. in Analytical Chemistry in 2002 at the University of Wisconsin-Madison studying optical measurements of the electronic interaction of molecular films on silicon surfaces in UHV. Since joining NIST, she has investigated the chemical, physical, and electrical properties of monolayers on metal, semiconductor, and transition metal dichalcogenide (TMD) surfaces. She is an internationally recognized leader in pioneering measurement science for critical surface and interfacial properties of nanoelectronic devices and their constituent materials. 

Dr. Christina Hacker's general research interests include:

  • Chemical, physical, and electronic properties of monolayers for engineering electronic properties.
  • Advancing spectroscopic metrology of nanoscale devices and their constituent materials. 
  • Surface and interface chemistry including interface modification and surface-sensitive analytical techniques.

Google Scholar


Ruddlesden–Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors

Murali Gedda, Emre Yengel, Hendrik Faber, Fabian Paulus, Joshua Kreb, Ming Chun Tang, Siyuan Zhang, Christina A. Hacker, Prashant Kumar, Dipti R. Naphade, Yana Vaynzof, George Volonakis, Feliciano Giustino, Thomas D. Anthopoulos
Controlling the morphology of metal halide perovskite layers during processing is critical for the reliable manufacturing of optoelectronic devices. Here we
Created October 9, 2019, Updated July 11, 2022