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Abstract
A gateless P-N junction metrolog includes: a junction member including: a p-interface; and an n-interface disposed laterally and adjacent to the p-interface; and a p-n junction disposed at where the p-interface and n-interface contact; a drain electrode disposed on the junction member; a source electrode disposed on the junction member such that the source electrode is spaced apart from and opposing the drain electrode; an n-polymer disposed on the n-interface of the junction member; a p-polymer disposed on the p-interface of the junction member such that the n-polymer is interposed between the p-polymer and the n-interface; a mediation polymer disposed on the p-polymer such that the p-polymer is interposed between the mediation polymer and the junction member; and a mediator disposed in the mediation polymer and that receives electrons from the junction member in forming the p-interface.
patent description
(1) Disclosed is a gateless P-N junction metrolog comprising: a junction member comprising: a p-interface; and an n-interface disposed laterally and adjacent to the p-interface; and a p-n junction disposed at where the p-interface and n-interface contact; a drain electrode disposed on the junction member; a source electrode disposed on the junction member such that the source electrode is spaced apart from and opposing the drain electrode; an n-polymer disposed on the n-interface of the junction member; a p-polymer disposed on the p-interface of the junction member such that the n-polymer is interposed between the p-polymer and the n-interface; a mediation polymer disposed on the p-polymer such that the p-polymer is interposed between the mediation polymer and the junction member; and a mediator disposed in the mediation polymer and that receives electrons from the junction member in forming the p-interface.
(2) Disclosed is a process for performing resistance metrology with the gateless P-N junction metrolog, the process comprising: connecting a first electrode to the p-interface; connecting a second electrode to the n-interface; communicating voltage across through the drain electrode and the source electrode; and acquiring a resistance value across the p-n junction from the first electrode and the second electrode to perform resistance metrology.