Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound

Published

February 12, 2016

Author(s)

Sujitra J. Pookpanratana, Hao Zhu, Emily G. Bittle, Sean Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Christina A. Hacker

Abstract

Non-volatile Flash-based memory devices, which incorporate a novel redox-active diruthenium molecule, is demonstrated. The memory device is in a capacitor structure, metal/oxide/molecule/oxide/silicon, where the diruthenium molecule is covalently attached to the oxide using a unique “click” chemistry attachment which serves two fold purposes: (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. The molecular memory devices display an unsaturated charge storage window, and we attribute this demonstration to the intrinsic properties of the redox-active molecule. These molecular devices are very attractive for future non-volatile memory applications.

Citation

Journal of Physics Condensed Matter

Volume

28

Issue

9

Pub Type

Journals

Citation

Pookpanratana, S. , Zhu, H. , Bittle, E. , Natoli, S. , Ren, T. , Richter, C. , Li, Q. and Hacker, C. (2016), Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound, Journal of Physics Condensed Matter (Accessed October 21, 2025)