Charge Offset Stability in Tunable-Barrier Si SET Devices

Published

January 17, 2007

Author(s)

Neil M. Zimmerman, Brian Simonds, Mikio Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa

Abstract

The problem of charge offset drift in single-electron tunneling devices, based on the Coulomb blockade, can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is excellent stability, with a drift that is in general less than 0.01 e. We also demonstrate that these devices exhibit some unwanted sensitivity to external perturbations including temperature excursions. Finally, we show that these devices can be ?trained? to minimize their sensitivity to abrupt voltage changes.

Citation

Applied Physics Letters

Volume

90

Issue

033507-1

Pub Type

Journals

Download Paper

DOI Link

Keywords

charge offset, Coulomb blockade, tunable-barrier

Citation

Zimmerman, N. , Simonds, B. , Fujiwara, M. , Ono, Y. , Takahashi, Y. and Inokawa, H. (2007), Charge Offset Stability in Tunable-Barrier Si SET Devices, Applied Physics Letters, [online], https://doi.org/10.1063/1.2431778 (Accessed October 28, 2025)