Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

Published

March 1, 2007

Author(s)

Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel

Abstract

The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align individual nanowires. We show that a single nanowire can be picked up and transferred to a pre-defined location by electrostatic force. Compatible fabrication processes have been developed to simultaneously pattern multiple aligned nanowires by using one-level of photolithography. In addition, we have fabricated and characterized representative devices and test structures including nanoelectromechanical switches with large on/off current ratios, bottom-gated silicon nanowire field-effect transistors, and both transfer-length-method and Kelvin test structures.

Citation

IEEE Transactions on Nanotechnology

Volume

6

Issue

2

Pub Type

Journals

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Keywords

contact resistance, nanoelectromechanical switch, Kelvin test structure, silicon nanowire, Transfer Length Method

Citation

Li, Q. , Koo, S. , Richter, C. , Edelstein, M. , Bonevich, J. , Kopanski, J. , Suehle, J. and Vogel, E. (2007), Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures, IEEE Transactions on Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32351 (Accessed October 2, 2025)