Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films

Published

March 24, 2005

Author(s)

Seong-Eun Park, Joseph Kopanski, Youn-Seon Kang, Larry Robins

Abstract

Undoped and Si-doped GaN epitaxial films have been grown on sapphire substrates by metal-organic chemical vapor deposition. Variable angle spectroscopic ellipsometry (VASE) and surface photovoltage (SPV) spectroscopy were used to determine the minority carrier diffusion lengths of the films. Both the reflectivity and absorption coefficient (α) could be calculated from the VASE measurements. In SPV spectra at room temperature, a strong transition with a threshold at 3.42 eV was observed in both films, while an exciton-related absorption was observed only in the undoped GaN. The minority carrier diffusion lengths were calculated to be about 200 nm for the undoped GaN and about 20 nm for the Si-doped GaN. Moreover, a large divergence in the range of 1/α in the undoped GaN was found and attributed to its high surface barrier energy.

Citation

Physica Status Solidi

Pub Type

Journals

Keywords

Electron states at surfaces and interfaces, III-V semiconductors, Photoconduction and photovoltaic effects

Citation

Park, S. , Kopanski, J. , Kang, Y. and Robins, L. (2005), Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films, Physica Status Solidi (Accessed May 2, 2026)

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